Gallium arsenide
Yuanjing Electronic Technology Co., Ltd. specializes in manufacturing GaAs wafer and polycrystal bar with high quality GaAs substrate. Size 2" 3" 4" 6", Crystal direction (100) (111), type: N-Type doped Si, P-Type doped Zn, semi-insulated Undope.
------- our company specializes in providing "laser field" with high quality 110um thick double throw GaAs ------
--------- can also provide high quality LD grade epitaxial GaAs ---- with EPD<500, <300, <100, <50
Please refer to the following table for general product specifications
| Parameter | Guaranteed / Actual Values | UOM | |
| Growth Method: | VGF | ||
| Conduct Type: | S-I-N | ||
| Dopant: | Undoped | ||
| Diameter: | 50.7± 0.1 | mm | |
| Orientation: | (100)± 0.50 | ||
| OF location/length: | EJ [ 0-1-1]± 0.50/16±1 | ||
| IF location/length: | EJ [ 0-1 1 ]± 0.50/7±1 | ||
| Resistivity: | Min: 1.0 E8 | Max: 2.2 E8 | Ω·cm |
| Mobility: | Min: 4500 | Max: 5482 | cm2/v.s |
| EPD: | Min: 700 | Max: 800 | / cm2 |
| Thickness: | 350± 20 | µm | |
| Edge Rounding: | 0.25 | mmR | |
| Laser Marking: | N/A | ||
| TTV/TIR: | Max: 10 | µm | |
| BOW: | Max: 10 | µm | |
| Warp: | Max: 10 | µm | |
| Partical Count: | ＜50/wafer(for particle>0.3um) | ||
| Surface Finish– front: | Polished | ||
| Surface Finish –back: | Etched | ||
| Epi-Ready: |
Yes |
||
| Parameter | Guaranteed / Actual Values | UOM | |
| Growth Method: | VGF | ||
| Conduct Type: | S-I-N | ||
| Dopant: | Undoped | ||
| Diameter: | 76.2± 0.2 | mm | |
| Orientation: | (100) 00± 0.50 | ||
| OF location/length: | EJ [ 0-1-1]± 0.50/22±2 | ||
| IF location/length: | EJ [ 0-1 1 ]± 0.50/11±2 | ||
| Resistivity: | Min: 1E8 | Max: 1.03E8 | Ω·cm |
| Mobility: | Min: 5613 | Max: 6000 | cm2/v.s |
| EPD: | Min: 700 | Max: 800 | Max: |
| Thickness: | 625±20 | µm | |
| Edge Rounding: | 0.375 | mmR | |
| Laser Marking: | N/A | ||
| TTV: | N/A | µm | |
| Surface Finish– front: | Polished | ||
| Surface Finish –back: | Etched | ||
| Epi-Ready: |
Yes |
||
| Parameter | Guaranteed / Actual Values | UOM | |
| Growth Method: | VGF | ||
| Conduct Type: | S-I-N | ||
| Dopant: | Undoped | ||
| Diameter: | 100.0± 0.2 | mm | |
| Orientation: | (100)± 0.30 | ||
| OF location/length: | EJ [ 0-1-1]± 0.50/32.5±1 | ||
| IF location/length: | EJ [ 0-1 1 ]± 0.50/18±1 | ||
| Resistivity: | Min: 1.5 E8 | Max: 2.0 E8 | Ω·cm |
| Mobility: | Min: 4832 | Max: 4979 | cm2/v.s |
| EPD: | Min: 600 | Max: 700 | / cm2 |
| Thickness: | 625± 25 | µm | |
| Edge Rounding: | 0.375 | mmR | |
| TTV/TIR: | Max: 3 | µm | |
| BOW: | Max: 4 | µm | |
| Warp: | Max: 5 | µm | |
| Partical Count: | ＜100/wafer(for particle>0.3um) | ||
| Surface Finish– front: | Polished | ||
| Surface Finish –back: | Polished | ||
| Epi-Ready: |
Yes |
||
| Parameter | Customer’s Requirements | Guaranteed / Actual Values | UOM | ||
| Growth Method: | VGF | VGF | |||
| Conduct Type: | S-C-P | S-C-P | |||
| Dopant: | GaAs-Zn | GaAs-Zn | |||
| Diameter: | 50.8± 0.4 | 50.8± 0.4 | mm | ||
| Orientation: | (100)± 0.50 | (100)± 0.50 | |||
| OF location/length: | EJ [ 0-1-1]± 0.50/16±1 | EJ [ 0-1-1]± 0.50/16±1 | |||
| IF location/length: | EJ [ 0-1 1 ]± 0.50/7±1 | EJ [ 0-1 1 ]± 0.50/7±1 | |||
| Ingot CC: | Min: 1 E19 | Max: 5 E19 | Min: 1.4 E19 | Max: 1.9 E19 | /cm3 |
| Resistivity: | Min: N/A | Max: N/A | Min: N/A | Max: N/A | Ω·cm |
| Mobility: | Min: N/A | Max: N/A | Min: N/A | Max: N/A | cm2/v.s |
| EPD: | Max: 5000 | Min: 600 | Max: 700 | / cm2 | |
| Thickness: | 350±25 | 350±25 | µm | ||
| Surface Finish– front: | Polished | Polished | |||
| Surface Finish –back: | Etched | Etched | |||
| Epi-Ready: | Yes | Yes | |||
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